transistor(pnp) features z complementary to s9014 marking: m6 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.1 a p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c = -0.1ma, i b =0 -45 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-50 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-5v, i c = -1ma 200 1000 collector-emitter saturation voltage v ce (sat) i c =-100ma, i b = -10ma -0.3 v base-emitter saturation voltage v be (sat) i c =-100ma, i b =-10ma -1 v transition frequency f t v ce =-5v, i c = -10ma f= 30mhz 150 mhz classification of h fe rank l h range 200-450 450-1000 so t -23 1. base 2. emitter 3. collector s901 5 1 date:2011/05 www.htsemi.com semiconductor jinyu
s901 5 2 date:2011/05 www.htsemi.com semiconductor jinyu
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